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FDD6685
February 2004
FDD6685
30V P-Channel PowerTrench(R) MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench
Features
* -40 A, -30 V. RDS(ON) = 20 m @ VGS = -10 V RDS(ON) = 30 m @ VGS = -4.5 V * Fast switching speed * High performance trench technology for extremely low RDS(ON) * High power and current handling capability * Qualified to AEC Q101
process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V).
S
D G S
TO-252
D G
Absolute Maximum Ratings
Symbol
VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage
TA=25oC unless otherwise noted
Parameter
Ratings -30
25
Units
V V A W
Continuous Drain Current @TC=25C (Note 3) @TA=25C (Note 1a) Pulsed, PW 100s (Note 1b) Power Dissipation for Single Operation
(Note 1) (Note 1a) (Note 1b)
-40 -11 -100
52 3.8 1.6
PD
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +175
2.9 40 96
C
Thermal Characteristics
RJC RJA RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
C/W C/W C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
(c)2004 Fairchild Semiconductor Corporation
FDD6685 Rev D (W)
FDD6685 FDD6685
Package Marking and Ordering Information
Device Marking FDD6685 Device FDD6685 Reel Size 13" Tape Width 12mm Quantity 2500 units
Electrical Characteristics
Symbol
EAS IAS
TA = 25C unless otherwise noted
Parameter
Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note 2)
Test Conditions
ID = -11 A
Min Typ Max
42 -11
Units
mJ A
Drain-Source Avalanche Ratings (Note 4)
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -24 V, VGS = 25V, VGS = 0 V VDS = 0 V -30 -24 -1 100 V mV/C A nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = -10 V, ID = -11 A VGS = -4.5 V, ID = -9 A VGS = -10 V,ID = -11 A,TJ=125C VGS = -10 V, VDS = -5 V VDS = -5 V, ID = -11 A
-1
-1.8 5 14 21 20
-3
V mV/C
20 30
m
ID(on) gFS
-20 26
A S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = -15 V, f = 1.0 MHz VGS = 15 mV,
V GS = 0 V,
1715 440 225
pF pF pF
f = 1.0 MHz
3.6
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = -15 V, VGS = -10 V,
ID = -1 A, RGEN = 6
17 11 43 21
31 21 68 34 24
ns ns ns ns nC nC nC
VDS = -15V, VGS = -5 V
ID = -11 A,
17 9 4
Drain-Source Diode Characteristics and Maximum Ratings
VSD Trr Qrr Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = -3.2 A
(Note 2)
-0.8 26 13
-1.2
V ns nC
IF = -11 A, diF/dt = 100 A/s
FDD6685 Rev D (W)
FDD6685
Electrical Characteristics
Notes:
TA = 25C unless otherwise noted
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) RJA = 40C/W when mounted on a 1in2 pad of 2 oz copper
b) RJA = 96C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. Maximum current is calculated as:
PD RDS(ON)
where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V.
4. Starting TJ = 25C, L = 0.69mH, IAS = -11A
FDD6685 Rev D (W)
FDD6685
Typical Characteristics
40 VGS = -10V -6.0V -ID, DRAIN CURRENT (A) 30 -5.0V -4.5V NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.0V
2.4 2.2 2 1.8 -4.0V 1.6 -4.5V 1.4 1.2 1 0.8 0 1 2 -VDS, DRAIN-SOURCE VOLTAGE (V) 3 0 2 4 6 -ID, DRAIN CURRENT (A) 8 10 -5.0V -6.0V -8.0V -10V VGS = -3.5V
20
-3.5V
10 -3.0V
0
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.08 RDS(ON), ON-RESISTANCE (OHM)
1.6 NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -11.0A VGS = -10V 1.4
ID = -5.5A 0.06
1.2
0.04
1
TA = 125 C
o
0.8
0.02
TA = 25 C
o
0.6 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 175
0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10
Figure 3. On-Resistance Variation with Temperature.
40 125 C -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 30 25 C 20
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
TA = -55oC
VGS = 0V
o
10 TA = 125 C 1 25oC 0.1 -55oC 0.01
o
10
0.001
0 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) 5
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDD6685 Rev D (W)
FDD6685
Typical Characteristics
10 -VGS, GATE-SOURCE VOLTAGE (V) ID = -11.0 A 8 VDS = 10V 30V 6 20V 4
2400
f = 1MHz VGS = 0 V
CAPACITANCE (pF)
1800
Ciss
1200
Coss
600
2 Crss 0 0 5 10 15 20 Qg, GATE CHARGE (nC) 25 30
0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30
Figure 7. Gate Charge Characteristics.
1000 P(pk), PEAK TRANSIENT POWER (W) 100
Figure 8. Capacitance Characteristics.
100 ID, DRAIN CURRENT (A) RDS(ON) LIMIT 10 1 10s DC VGS = 10V SINGLE PULSE RJA = 96oC/W TA = 25oC 0.01 0.01 1ms 10ms 100ms 100s
80
SINGLE PULSE RJA = 96C/W TA = 25C
60
1
40
0.1
20
0.10 1.00 10.00 VDS, DRAIN-SOURCE VOLTAGE (V)
100.00
0 0.01
0.1
1 10 t1, TIME (sec)
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * RJA RJA = 96 C/W P(pk)
0.02 0.01
0.1
0.1 0.05
t1 t2
SINGLE PULSE
0.01
TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDD6685 Rev D (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
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POPTM Power247TM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER SMART STARTTM SPMTM
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I8

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